Junctionless nanowire TFET with built-in NPN bipolar action: Physics and operational principle
M Rahimian, M Fathipour
Journal of Applied Physics 120 (22), 225702 2016
Asymmetric junctionless nanowire TFET with built-in {n}^{+} source pocket emphasizing on energy band modification
M Rahimian, M Fathipour
Journal of Computational Electronics 15 (4), 1297-1307 2016
Behavior of the dielectric function of monolayer\ hbox {MoS} _ {2} under Uniaxial Strain
M Nayeri, M Fathipour, AY Goharrizi
Journal of Computational Electronics 15 (4), 1388-1392 2016
Simulation and Fabrication of Photoconductive Antenna on LTG-GaAs for Terahertz Radiation
M Bashirpour, M Kolahdouz, M Neshat, H Hajhosseini, M Mansouree, ...
Asia Communications and Photonics Conference, AS2E. 4 2016
The effect of uniaxial strain on the optical properties of monolayer molybdenum disulfide
M Nayeri, M Fathipour, AY Goharrizi
Journal of Physics D: Applied Physics 49 (45), 455103 2016
Control of electric field in 4H-SiC UMOSFET: Physical investigation
M Jozi, AA Orouji, M Fathipour
Physica E: Low-dimensional Systems and Nanostructures 83, 107-11312016
NPN Bipolar Action in Junctionless Nanowire TFET: Physical Operation of a Modified Current Mechanism for Low Power Applications
M Rahimiana, M Fathipour
arXiv preprint arXiv:1609.08150 2016
Fabrication of a liquid-gated enzyme field effect device for sensitive glucose detection
M Fathollahzadeh, M Hosseini, B Haghighi, M Kolahdouz, M Fathipour
Analytica chimica acta 924, 99-105 2016
The effect of uniaxial strain on the electronic structure of monolayer MoS 2
M Nayeri, M Fathipour, AY Goharrizi
Electrical Engineering (ICEE), 2016 24th Iranian Conference on, 267-270 2016
Analytical modeling and numerical simulation of the short-wave infrared electron-injection detectors
Y Movassaghi, V Fathipour, M Fathipour, H Mohseni
Applied Physics Letters 108 (12), 12110242016
ZnO–PEDOT core–shell nanowires: An ultrafast, high contrast and transparent electrochromic display
M Kateb, S Safarian, M Kolahdouz, M Fathipour, V Ahamdi
Solar Energy Materials and Solar Cells 145, 200-20532016
Magneto-induced tunability of thermo-spin current in deformed zigzag graphene nanoribbons
D Adinehloo, M Fathipour
Journal of Applied Physics 118 (23), 234305 2015
Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap
M Mahmoudi, Z Ahangari, M Fathipour
Chinese Physics B 25 (1), 018501 2015
High-voltage and low specific on-resistance power UMOSFET using P and N type columns
AA Orouji, M Jozi, M Fathipour
Materials Science in Semiconductor Processing 39, 711-720 2015
Analysis of power gating in different hierarchical levels of 2MB cache, considering variation
M Jafari, M Imani, M Fathipour
International Journal of Electronics 102 (9), 1594-160832015
Investigation of high-and low-κ Gate dielectrics in tuning of graphene-loaded THz antennas
R Hekmati, HG Fard, M Neshat, M Fathipour
2015 23rd Iranian Conference on Electrical Engineering, 1098-1102 2015
Strain engineering of low-buckled two-dimensional materials based on tight binding approach
M Mahmoudi, D Adineloo, M Fathipour
2015 23rd Iranian Conference on Electrical Engineering, 1159-1163 2015
Effect of tip mass on frequency response and sensitivity of AFM cantilever in liquid
AF Payam, M Fathipour
Micron 70, 50-5452015
An investigation of highly scaled III-nitride Gallium-face and Nitrogen-face HEMTs
MJ Mohammadzamani, M Fathipour
Superlattices and Microstructures 78, 125-133 2015
Numerical study of graphene superlattice-based photodetectors
M Moradinasab, M Pourfath, M Fathipour, H Kosina
IEEE Transactions on Electron Devices 62 (2), 593-60062015
High-performance infrared photo-transistor based on SWCNT decorated with PbS nanoparticles
M Asad, M Fathipour, MH Sheikhi, M Pourfath
Sensors and Actuators A: Physical 220, 213-22062014
Review on graphene spintronic, new land for discovery
N Kheirabadi, A Shafiekhani, M Fathipour
Superlattices and Microstructures 74, 123-145182014
Multi-objective optimization of microfluidic fuel cell
MS Feali, M Fathipour
Russian Journal of Electrochemistry 50 (6), 561-56812014
Band structure effect on the electron current oscillation in ultra-scaled GaSb Schottky MOSFET: tight-binding approach
Z Ahangari, M Fathipour
Journal of Computational Electronics 13 (2), 375-38212014
A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
R Hosseini, N Teimourzadeh, M Fathipour
Journal of Computational Electronics 13 (1), 170-17922014
SILICON ON RAISED INSULATOR FIELD EFFECT DIODE (SORI-FED) FOR ALLEVIATING SCALING PROBLEM IN FED
M Vadizadeh, M Fathipour, G Darvish
International Journal of Modern Physics B 28 (05), 1450038 2014
An air-breathing microfluidic fuel cell with a finny anode
MS Feali, M Fathipour
Russian Journal of Electrochemistry 50 (2), 162-16922014
Effect of Tip Mass on Modal Flexural Sensitivity of Rectangular AFM Cantilevers to Surface Stiffness Variations
AF Payam, M Fathipour
Arabian Journal for Science and Engineering 39 (2), 1393-139722014
Design and implementation of high data capacity RFID tag using eight-phase encoding
M Tavakoli, H Hajghassem, M Dousti, M Fathipour
International Journal of Electronics 101 (1), 113-12012014
Improved Control of Concentration Boundary Layer in Microfluidic Fuel Cells
R Hassanshahi, M Fathipour
International Journal of Renewable Energy Research (IJRER) 3 (4), 901-905 2013
Tight-binding analysis of current oscillation in nanoscale In0. 53Ga0. 47As Schottky MOSFET
Z Ahangari, M Fathipour
Journal of Physics D: Applied Physics 46 (44), 44510112013
Performance assessment of nanoscale Schottky MOSFET as resonant tunnelling device: Non-equilibrium Green’s function formalism
Z Ahangari, M Fathipour
Pramana 81 (3), 511-520 2013
Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET
Z Ahangari, M Fathipour
Chinese Physics B 22 (9), 09850212013
Tunable bandgap in bilayer armchair graphene nanoribbons: concurrent influence of electric field and uniaxial strain
K Khaliji, M Noei, SM Tabatabaei, M Pourfath, M Fathipour, Y Abdi
IEEE Transactions on Electron Devices 60 (8), 2464-247072013
On the Robustness of Magnetism in Zigzag Graphene Nanoribbons
M Noei, K Khaliji, M Fathipour
Modern Physics Letters B 27 (15), 1350111 2013
A numerical study of a new four-layer-substrate closing device
T Afra, SN Anousheh, A Taghinia, M Fathipour
2013 21st Iranian Conference on Electrical Engineering (ICEE), 1-6 2013
A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS2-based double gate field effect transistor
SM Tabatabaei, M Noei, K Khaliji, M Pourfath, M Fathipour
Journal of Applied Physics 113 (16), 163708182013
Bottom-up design of a high performance ultra-low power DFT utilizing multiple-V DD, multiple-Vth and gate sizing
M Jafari, M Imani, M Fathipour, N Sehatbakhsh
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th ...32013
Design of an ultra-low power 32-bit adder operating at subthreshold voltages in 45-nm FinFET
M Jafari, M Imani, M Ansari, M Fathipour, N Sehatbakhsh
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th ...52013
Study of the tip mass and interaction force effects on the frequency response and mode shapes of the AFM cantilever
AF Payam, M Fathipour
The International Journal of Advanced Manufacturing Technology 65 (5-8), 957-96672013
Numerical and experimental analysis of machining of Al (20 vol% SiC) composite by the use of ABAQUS software
M Fathipour, M Hamedi, R Yousefi
Materialwissenschaft und Werkstofftechnik 44 (1), 14-2052013
A New Structure for Improved Fuel Utilization and Performance of Microfluidic Fuel Cell
R Hassanshahi, MF Fathipour, MS Feali
International Journal of Advanced Renewable Energy Researches (IJARER) 1 (11) 2012
Design of a New Microfluidic Fuel Cell for Enhanced Current Density and Performance
R Hassanshahi, M Fathipour
International Journal of Advanced Renewable Energy Researches (IJARER) 1 (11) 2012
Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study
Z Ahangari, M Fathipour
Journal of Nanostructures 2 (4), 477-483 2012
Device performance of graphene nanoribbon field-effect transistors in the presence of line-edge roughness
AY Goharrizi, M Pourfath, M Fathipour, H Kosina
IEEE Transactions on Electron Devices 59 (12), 3527-3532232012
Investigation of the Carrier Concentration and Laser Peak Intensity on the Terahertz Pulse Generated by Photoconductive Antennas Based On LT-GaAs
MA Malakoutian, M Fathipour
Majlesi Journal of Telecommunication Devices 1 (1) 2012
A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor
R Hosseini, M Fathipour, R Faez
International Journal of Electronics 99 (9), 1299-130742012
Investigation of reinforced sic particles percentage on machining force of metal matrix composite
M Fathipour, P Zoghipour, J Tarighi, R Yousefi
Modern Applied Science 6 (8), 9102012
Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)
R Hosseini, M Fathipour, R Faez
International Journal of Physical Sciences 7 (28), 5054-506142012
Device simulation of a novel strained silicon channel RF LDMOS
V Fathipour, S Fathipour, M Fathipour, MA Malakootian
Microelectronic Engineering 94, 29-3222012
A computational study of ballistic graphene nanoribbon field effect transistors
M Noei, M Moradinasab, M Fathipour
Physica E: Low-dimensional Systems and Nanostructures 44 (7), 1780-1786122012
Performance Evaluation of Source Heterojunction Strained Channel Gate all around Nanowire Transistor
R Hosseini, M Fathipour, R Faez
Modern Physics Letters B 26 (12), 125007642012
Investigation of optimum junction depth of InSb Infrared Photodiode
M Asad, M Ghorbanzadeh, G Sareminia, M Fathipour
20th Iranian Conference on Electrical Engineering (ICEE2012), 260-262 2012
Modelling the effect of 1 MeV electron irradiation on the performance degradation of a single junction Al x Ga 1− x As/GaAs solar cell
A Elahidoost, M Fathipour, A Mojab
20th Iranian Conference on Electrical Engineering (ICEE2012), 113-11712012
Numerical analysis of ballistic ultrathin graphene nanoribbon field effect transistors
M Noei, SM Tabatabaei, M Fathipour
20th Iranian Conference on Electrical Engineering (ICEE2012), 255-259 2012
Leakage current reduction in domino logic
MJ Mohammadzamani, SM Tabatabaei, M Fathipour
20th Iranian Conference on Electrical Engineering (ICEE2012), 198-20112012
Optical properties of armchair graphene nanoribbons embedded in hexagonal boron nitride lattices
H Nematian, M Moradinasab, M Pourfath, M Fathipour, H Kosina
Journal of Applied Physics 111 (9), 093512122012
A compact model for the ion implanted channel LDMOS transistor
MG Shirvan, M Fathipour
Solid State Sciences 14 (4), 471-475 2012
Analytical models of approximations for wave functions and energy dispersion in zigzag graphene nanoribbons
M Moradinasab, H Nematian, M Pourfath, M Fathipour, H Kosina
Journal of Applied Physics 111 (7), 07431862012
A computational study on the electronic properties of armchair graphene nanoribbons confined by boron nitride
M Noei, M Fathipour, M Pourfath
Japanese Journal of Applied Physics 51 (3R), 03510132012
Theoretical study of single and bilayer graphene nanoribbons photodetectors
M Moradinasab, H Nematian, M Pourfath, M Fathipour, H Kosina
ECS Meeting (ECSM)12012
A numerical study of line-edge roughness scattering in graphene nanoribbons
A Yazdanpanah, M Pourfath, M Fathipour, H Kosina, S Selberherr
IEEE Transactions on Electron Devices 59 (2), 433-440392012
Capillary Force Models for Interactions of Several Tip/Substrate in AFM Based on the Energy Method
AF Payam, M Fathipour
Journal of Surface Science and Technology 28 (1-2), 71-90 2012
Spectroscopic study on the interaction of medicinal pigment, curcumin with various surfactants: An overview
S Ghosh, S Mondal
J. Surf. Sci. Technol 28, 179-19562012
A Robust Motion Tracking Control of Piezo-Positioning Mechanism with Hysteresis Estimation
AF Payam, MJ Yazdanpanah, M Fathipour
INTECH Open Access Publisher 2012
The impact of process parameter variations on the electrical characteristics of a RESURF LDMOS and its compact modeling
V Fathipour, A Mojab, MA Malakoutian, S Fathipour, M Fathipour
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-222011
Dependence of self-heating effect on passivation layer in AlGaN/GaN HEMT devices
A Haghshenas, M Fathipour, A Mojab
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-222011
Low-field acoustic phonon limited mobility in GNRs
S Jalili, M Fathipour
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-2 2011
Characteristics optimizing of LDMOS devices with Advanced-RESURF
S Shahbazi, M Fathipour
Semiconductor Device Research Symposium (ISDRS), 2011 International, 1-212011
A quantum mechanical transport approach to simulation of quadruple gate silicon nanowire transistor
F Karimi, M Fathipour, R Hosseini
Journal of nanoscience and nanotechnology 11 (12), 10476-1047932011
An analytical model for line-edge roughness limited mobility of graphene nanoribbons
AY Goharrizi, M Pourfath, M Fathipour, H Kosina, S Selberherr
IEEE Transactions on Electron Devices 58 (11), 3725-3735202011
A capillary force model for interactions between two spheres
AF Payam, M Fathipour
Particuology 9 (4), 381-386102011
A novel power High Electron Mobility Transistor with partial stepped recess in the drain access region for performance improvement
S Rajabi, AA Orouji, HA Moghadam, SEJ Mahabadi, M Fathipour
Signal Processing, Communication, Computing and Networking Technologies ...32011
A novel AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistor for performance improvement
S Rajabi, AA Orouji, HA Moghadam, SEJ Mahabadi, M Fathipour
Signal Processing, Communication, Computing and Networking Technologies ...42011
A novel double field-plate power high electron mobility transistor based on AlGaN/GaN for performance improvement
S Rajabi, AA Orouji, HA Moghadam, SEJ Mahabadi, M Fathipour
Signal Processing, Communication, Computing and Networking Technologies ...42011
Analysis of a source hetrojunction LDMOS device with strained silicon channel
V Fathipour, MA Malakoutian, S Fathipour, M Fathipour
2011 19th Iranian Conference on Electrical Engineering, 1-512011
Compact model for the electronic properties of edge-disordered graphene nanoribbons
AY Goharrizi, M Pourfath, M Fathipour, H Kosina
Thermal, Mechanical and Multi-Physics Simulation and Experiments in ...22011
Control of Atomic Force Microscope Based on the Fuzzy Theory
AF Payam, EMA Rahman, M Fathipour
INTECH Open Access Publisher 2011
Improvement in silicon on insulator devices using strained Si/SiGe technology for high performance in RF integrated circuits
M Fathipour, S Omidbakhsh, K Khodayari
World Acad. Sci., Eng. Technol 48, 461-46412010
Formation of three-dimensional and nanowall structures on silicon using a hydrogen-assisted high aspect ratio etching
S Azimi, M Mehran, A Amini, A Vali, S Mohajerzadeh, M Fathipour
Journal of Vacuum Science & Technology B 28 (6), 1125-1131142010
On the role of line-edge roughness on the diffusion and localization in GNRs
M Pourfath, A Yazdanpanah, M Fathipour, H Kosina
Computational Electronics (IWCE), 2010 14th International Workshop on, 1-412010
Improvement of Short Channel Effects in Cylindrical Strained Silicon Nanowire Transistor
F Karimi, M Fathipour, H Ghanatian, V Fathipour
World Academy of Science, Engineering and Technology, International Journal ... 2010
The Impact of Process Parameters on the Output Characteristics of an LDMOS Device
MA Malakoutian, V Fathipour, M Fathipour, A Mojab, MM Allame, ...
World Academy of Science, Engineering and Technology, International Journal ...12010
The Effect of a Graded Band Gap Window on the Performance of a Single Junction AlxGa1-xAs/GaAs Solar Cell
M Fathipour, A Elahidoost, A Mojab, V Fathipour
World Academy of Science, Engineering and Technology 7012010
A Comparison Study of Electrical Characteristics in Conventional Multiple-gate Silicon Nanowire Transistors
F Karimi, M Fathipour, H Ghanatian, V Fathipour
World Academy of Science, Engineering and Technology, International Journal ... 2010
Analysis of a Novel Strained Silicon RF LDMOS
V Fathipour, MA Malakootian, S Fathipour, M Fathipour 2010
The Analysis of Photoconductive Semiconductor Switch Operation in the Frequency of 10GHz
M Fathipour, SN Anousheh, KG Davoudi, V Fathipour
World Academy of Science, Engineering and Technology, International Journal ... 2010
Schottky barrier nano-MOSFET with an asymmetrically oxidized source/drain structure
KB Parizi, N Peyvast, BK Mousavi, S Mohajerzadeh, M Fathipour
Solid-State Electronics 54 (1), 48-51102010
Electric double layers interactions under condition of variable dielectric permittivity
AF Payam, M Fathipour
Interaction and multiscale mechanics 3 (2), 157-171 2010
THE IMPACT OF STRUCTURAL PARAMETERS ON THE PERFORMANCE OF NANOSCALE DG-SOI MOSFETS IN SUB THRESHOLD REGION
F KOHANI, H NEMATIAN, M FATHIPOUR
JOURNAL OF ELECTRICAL ENGINEERING SCIENCE 1 (1), 15-19 2010
Design of a resonant suspended gate MOSFET with retrograde channel doping
M Fathipour, MH Refan, SM Ebrahimi
Iranian Journal of Electrical and Electronic Engineering 6 (2), 77-8342010
Design of a smart MEMS accelerometer using nonlinear control principles
FA Hassani, AF Payam, M Fathipour
Smart Structures and Systems 6 (1), 1-1622010
The impact of structural parameters on the electrical characteristics of GAA Silicon nanowire transistor
M Fathipour, F Karimi, R Hosseini
Semiconductor Device Research Symposium, 2009. ISDRS'09. International, 1-2 2009
AC analysis of UMOSFET ACCUFET
N Peyvast, M Fathipour
Semiconductor Device Research Symposium, 2009. ISDRS'09. International, 1-2 2009
Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs
S Sharbati, M Fathipour
Semiconductor Device Research Symposium, 2009. ISDRS'09. International, 1-222009
Double step buried oxide (DSBO) SOI-MOSFET: A proposed structure for improving self-heating effects
AA Orouji, S Heydari, M Fathipour
Physica E: Low-dimensional Systems and Nanostructures 41 (9), 1665-1668132009
High precision imaging for non-contact mode atomic force microscope using an adaptive nonlinear observer and output state feedback controller
AF Payam, M Fathipour, MJ Yazdanpanah
Digest Journal of Nanomaterials and Biostructures 4 (3), 429-44232009
Modeling and dynamic analysis of atomic force microscope based on Euler–Bernoulli beam theory
AF Payam, M Fathipour
Dig J Nanomater Biostruct 4 (3), 565-57892009
A new partial-SOI LDMOSFET with modified electric field for breakdown voltage improvement
AA Orouji, S Sharbati, M Fathipour
IEEE Transactions on Device and Materials Reliability 9 (3), 449-453362009
Novel techniques for off-state current components reduction in double gate source-heterojunction-MOS-transistor
M Tahermaram, M Vadizadeh, H Ghanatian, M Fathipour
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on, 242-245 2009
Numerical study of scaling issues of C-CNTFETs
F Karbassian, M Moradinasab, M Fathipour
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on, 140-143 2009
A numerical study of silicon opening process
B Davaji, M Fathipour, M Vadizadeh
2009 1st Asia Symposium on Quality Electronic Design 2009
Improving performance in single field plate power High Electron Mobility Transistors (HEMTs) based on AlGaN/GaN
M Fathipour, N Peyvast, R Azadvari
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on, 157-161 2009
A novel 4H-SiC UMOSFET_ACCUFET with large blocking voltage
N Peyvast, M Fathipour
2009 1st Asia Symposium on Quality Electronic Design22009
New challenges on leakage current improvement in tunnel FET by using low-k oxide
M Vadizadeh, B Davaji, M Fathipour
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on, 136-13922009
A comparison study of the effects of supply voltage and temperature on the stability and performance of CNFET and nanoscale Si-MOSFET SRAMs
M Moradinasab, F Karbassian, M Fathipour
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on, 19-23142009
Employing work function enginnering and asymmetric gate oxide in nano-scale source-heterojunction-MOS-transistor
M Tahermaram, M Vadizadeh, A Eslamzadeh, M Fathipour
2009 IEEE International Conference on Electro/Information Technology, 196-201 2009
High sensitivity interdigited capacitive sensors using branched treelike carbon nanotubes on silicon membranes
Y Abdi, A Ebrahimi, S Mohajerzadeh, M Fathipour
Applied Physics Letters 94 (17), 173507182009
Using low-k oxide for reduction of leakage current in double gate tunnel FET
M Vadizadeh, M Fathipour
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International ...42009
A compact physical model for subthreshold current in nanoscale FD/SOI MOSFETs
M Moradinasab, B Ebrahimi, M Fathipour
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International ...12009
A quantum transport approach to the calculation of gate tunnelling current in Nano-scale FD SOI MOSFETs
F Hasani, M Fathipour, F Karimi
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International ... 2009
A novel structure for improvment the I on/I off ratio in nano-scale double gate source-heterojunction-MOS-transistor
M Tahermaram, M Vadizadeh, M Fathipour
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International ... 2009
Nanoscale Ultra Thin Body-Silicon-On-Insulator field effect transistor with step BOX: Self-heating and short channel effects)
H GHanatian, M Fathipour, H Talebi
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International ...32009
Stable, low power and high performance SRAM based on CNFET
M Moradinasab, M Fathipour
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International ...122009
A backstepping controller for piezoelectric actuators with hysteresis in nanopositioning
AF Payam, M Fathipour, MJ Yazdanpanah
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE ...12009
Design of a feedforward controller for AFM nanopositioning based on neural network control theory
AF Payam, MJ Yazdanpanah, M Fathipour
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE ...22009
IMPACT OF HE-XE GAS MIXTURE ON EXCITATION EFFICIENCY IN PLASMA DISPLAYS PANEL AND ITS COMPARISON WITH THAT OF NE-XE AND NE-XE-AR MIXTURES
AR KHORAMI, M FATHIPOUR
JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS 6 (1 ... 2009
A study of the electrical characteristics of nanoscale Si/strained SiGe pMOSFET
M Fathipour, B Abbaszadeh
International Journal of Nanotechnology 6 (10-11), 882-891 2009
A novel nanoscale tunnel FET structure for increasing on/off current ratio
M Vadizadeh, M Fathipour, A Amid
2008 international Conference on Microelectronics, 300-30322008
Nanoscale SOI MOSFETs with double step buried oxide: A novel structure for suppressed self-heating effects
S Heydari, AA Orouji, M Fathipour
2008 International Conference on Microelectronics, 224-227 2008
A Novel impact Ionization MOS (I-MOS) structure using a silicon-germanium/silicon heterostructure channel
H Nematian, M Fathipour, M Nayeri
2008 International Conference on Microelectronics, 228-23112008
Impact of channel thickness on the electrical characteristics of nanoscale Double Gate SOI MOSFET with metal source-drain
M Fathipour, Z Ahangari
2008 Conference on Optoelectronic and Microelectronic Materials and Devices ...22008
Reducing breakdown voltages in impact ionization Metal-Oxide-Semiconductor (I-MOS) devices using hetero structure
H Nematian, M Fathipour
2008 Conference on Optoelectronic and Microelectronic Materials and Devices ...52008
A novel 6H-SiC UMOSFET_ACCUFET with low specific on-resistance and peak electric field
M Fathipour, N Peyvast, N Shoaazar
2008 Conference on Optoelectronic and Microelectronic Materials and Devices42008
Asyammetric gate oxide thickness technology for reduction of Gate Induced Drain Leakage current in nanoscale single gate SOI MOSFET
M Fathipour, F Kohani, Z Ahangari
2008 Conference on Optoelectronic and Microelectronic Materials and Devices ...22008
An estimator for the MEMS capacitive accelerometer based on adaptive back stepping theory
AF Payam, FA Hassani, M Fathipour
2008 26th International Conference on Microelectronics 2008
6H-SiC lateral power MOSFETs with an asymmetrical buried oxide double step structure
S Sharbati, AA Orouji, M Fathipour
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International ...22008
Effect of He-Xe mixtures on excitation efficiency in PDP and comparison of Ne-Xe mixtures with computational method
A Khorami, M Fathipour, F Bahmani
Proceedings of the 1st WSEAS International Conference on Computational ... 2007
Design of a hybrid closed loop control system for a MEMS accelerometer using backstepping principle
AF Payam, FA Hassani, M Fathipour
2007 Internatonal Conference on Microelectronics, 213-21652007
Backstepping Control Approach for Closed Loop Feedback Control of Atomic Force Microscope
AF Payam, M Fathipour, M Jalalifar
Multitopic Conference, 2007. INMIC 2007. IEEE International, 1-312007
An adaptive nonlinear estimator for the MEMS capacitive accelerometer based on adaptive input-output feedback linearization
FA Hassani, AF Payamb, M Fathipour, F Farbiz
Semiconductor Device Research Symposium, 2007 International, 1-2 2007
The effect of GE mole fraction on the electrical characteristics of nanoscale Si/SiGe heterostructure pMOSFET
M Fathipour, B Abbaszadeh, F Kohani, F Farbiz
Semiconductor Device Research Symposium, 2007 International, 1-2 2007
A novel SiGe-On-Insulator IMOS device with reduced bias voltages
H Nematian, M Fathipour, H Hajghasem, F Farbiz
2007 International Semiconductor Device Research Symposium22007
A comparison study between double and single gate p-IMOS
FA Hassani, M Fathipour, M Mehran
AFRICON 2007, 1-742007
Investigation of Gate Tunnelling Leakage Current in a Novel Fully Depleted SOI MOSFET with a Thin Oxide
E Fathi, F Farbiz, Y Mortazavi, M Fathipour
2005 International Semiconductor Device Research Symposium, 105-106 2005
Realization of flexible plasma display panels on PET substrates
RS Tarighat, A Goodarzi, S Mohajerzadeh, B Arvan, MR Gaderi, ...
Proceedings of the IEEE 93 (7), 1374-1378252005
The influence of the stacked and double material gate structures on the short channel effects in SOI MOSFETS
E Fathi, A Behnam, P Hashemi, B Esfandyarpour, M Fathipour
IEICE transactions on electronics 88 (6), 1122-112632005
EFFECT OF CHILLING TEMPERATURES ON VAGETATIVE GROWTH OF NINE ANNUAL MEDIC GENOTYPES (MEDICAGO SPP.)
ZA GHAMARI, M JEBELI, M FATHIPOUR
IRANIAN JOURNAL OF RANGELANDS AND FORESTS PLANT BREEDING AND GENETIC ... 2005
Special Section on Analog Circuit and Device Technologies-Device-The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS
E Fathi, A Behnam, P Hashemi, B Esfandyarpour, M Fathipour
IEICE Transactions on Electronics 88 (6), 1122-1126 2005
The influence of the stacked and double material gate structures on the short channel effects in SOI MOSFETs
A Behnam, E Fathi, P Hashemi, B Esfandiarpoor, M Fathipour
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International ... 2004
A lateral structure for low-cost fabrication of COOLMOS TM
D Shahrjerdi, M Fathipour, B Hekmatshoar, A Khakifirooz
Solid-State Electronics 48 (10), 1953-195712004
An improved shift-and-ratio L eff extraction method for MOS transistors with halo/pocket implants
M Fathipour, E Fathi, B Afzal, A Khakifirooz
Solid-State Electronics 48 (10), 1829-183212004
Extracting of substrate network resistances in RF CMOS transistors
MM Tabrizi, E Fathi, M Fathipour, N Masoumi
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers ...102004
Extracting of substrate network resistances in RFCMOS.
MM Tabrizi, E Fathi, M Fathipour, N Masoumi
WSEAS Transactions on Systems 3 (4), 1488-1491 2004
An improved shift-and-ratio L eff extraction method for MOS transistors with halo/pocket implants
E Fathi, B Afzal, M Fathipour, A Khakifirooz
Semiconductor Device Research Symposium, 2003 International, 430-431 2003
An approach to low-cost fabrication of lateral COOLMOS structures
D Shahrjerdi, B Hekmatshoar, A Khakifirooz, M Fathipour
Semiconductor Device Research Symposium, 2003 International, 272-27322003
THE EFFECT OF CHILLING TEMPERATURE ON PEROXIDASE IN NINE ANNUAL MEDICS SPECIES (MEDICAGO SPP.)
ZA GHAMARI, M JEBELI, M FATHIPOUR, SH HEYDARI
IRANIAN JOURNAL OF RANGELANDS AND FORESTS PLANT BREEDING AND GENETIC ... 2003
Effective Channel Length Extraction of MOS Transistors with Halo/Pocket Implants
E Fathi, B Afzal, M Fathipour
IEEE Transactions on Electron Devices 42, 314-31812003
I. HMTRODUCTKW
M Fathipour, PK Boyer, GJ Coilins, СW Wilmsen
J. Appi. Phys 57 (2) 1985
Photoenhanced thermal oxidation of InP
M Fathipour, PK Boyer, GJ Collins, CW Wilmsen
Journal of applied physics 57 (2), 637-642221985
LASER-ENHANCED LOW-TEMPERATURE OXIDATION OF INP
H ZARNANI, PK BOYER, M FATHIPOUR, CW WILMSEN, GJ COLLINS
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 132 (8), C349-C349 1985
Characterization of the laser enhanced chemical vapor deposited SiO₂/InP interface
M Fathipour
Colorado State University 1985
Characterization of the Laser Enhanced Chemical Vapor Deposited Silicon Dioxide/Indium-Phosphide Interface
M Fathipour 1985
Laser induced growth of silicon and indium phosphide native oxides
H Zarnani, PK Boyer, M Fathipour, CW Wilmsen, R Solanki, GJ Collins
Laser chemical processing of semiconductor devices. Extended abstracts 1984
High temperature annealing of InP anodic oxides
M Fathipour, WH Makky, J McLaren, KM Geib, CW Wilmsen
Journal of Vacuum Science & Technology A 1 (2), 662-666111983
Traps at the deposited insulator-InP interface—a discussion of a possible cause
CW Wilmsen, JF Wager, KM Geib, T Hwang, M Fathipour
Thin Solid Films 103 (1-3), 47-52101983
Effects of a thin SiO2 layer on the formation of metal–silicon contacts
SM Goodnick, M Fathipour, DL Ellsworth, CW Wilmsen
Journal of vacuum science & technology 18 (3), 949-954431981
Plannar Blue Laser Diodes with reduced linewidth enhancement factor
F Amini, M Fathipour 
Comparision between different graded non-resonant intercavity of the blue laser diode
F Amini, M Fathipour, A Haghparst 
A New Method of Increasing Breakdown Voltage and Decreasing Self Heating in SOI-LDMOS with Two Buried Oxide Layer
M Nasirifar, M Fathipour 
2009 1st Asia Symposium on Quality Electronic Design (ASQED 2009)
M Moradinasab, F Karbassian, M Fathipour 
Dependence of Self-Heating Effect on Substrate in AlGaN/GaN HEMT Devices
A Haghshenas, M Fathipour 
Electricity through Train
PB Chaitanya, G Gowtham 
A Novel Field Effect Diode (Fed) Structure For Improvement Of Ion/Ioff Ratio Parameter In The Nanometer Regime
M Vadizadeh, G Darvish, M Fathipour 
A Numerical Study of Line-Edge Roughness in Graphene Superlattice-Based Photodetectors
M Moradinasab, M Pourfath, M Fathipour, H Kosina
P} roceedings of the 14th {I} nternational {C} onference on {N} umerical {S ... 
A COMPACT MODEL FOR CURRENT-VOLTAGE IN DOPED CARBON NANOTUBE FIELD EFFECT TRANSISTORS
M MORADINASAB, M FATHIPOUR
JOURNAL OF IRANIAN ASSOCIATION OF ELECTRICAL AND ELECTRONICS ENGINEERS 8 (2 ... 
A Comparison study of nano-scale double and single gate P-IMOS
M Fathipour, F Arab Hassani 
The Impact of Single Atom Vacancies on the Electronic Properties of Graphene Quantum Dots
M Noei, H Taghinejad, M Taghinejad, M Fathipour 
Channel Length Scaling and the Impact of Exchange-Correlation Effects on the Performance of GAA SNW Transistor
R Hosseini, M Fathipour, R Faez 
The Effect of Buried Contacts Shading on the Performance of textured Silicon Solar Cells
A Mojab, M Fathipour 
Analysis of Thermal Noise in Very Low-Voltage Pipeline ADCs
MY Azizi, A Saeedfar, O Shoaei, M Fathipour 
A 13 ENOB and 40MS/s Switched-Capacitor Sample & Hold Circuit Using a Two-Stage OTA with non-ideal components available in CMOS 0.18 µ technology
M Jafari, M Imani, M Fathipour 
Study of Calibration Methods in Pipeline ADCs
MY Azizi, O Shoaei, M Fathipour 
Compound Semiconductor Devices Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance.......................................... M.-F. Romero, A. Jiménez, F. González-Posada Flores, S. Martln-Horcajo, F. Calle, and E. Munoz 374 Thin Film Transistors Low-Voltage Oxide-Based TFTs Self-Assembled on Paper Substrates With Tunable Threshold Voltage...........
J Sun, J Jiang, A Lu, W Dou, B Zhou, Q Wan, Y Kubota, T Matsumoto, ... 
RF LDMOS
V Fathipour, MA Malakootian, S Fathipour, M Fathipour 
A NUMERICAL STUDY OF GRAPHENE NANO-RIBBON BASED RESONANT TUNNELING DIODES
A Yazdanpanah, M Pourfath, M Fathipour, H Kosina, S Selberherr 
Compound Semiconductor Devices Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance.......................................... M.-F. Romero, A. Jimenez, F. Gonzalez-Posada Flores, S. Martln-Horcajo, F. Calle, and E. Munoz 374 Thin Film Transistors Low-Voltage Oxide-Based TFTs Self-Assembled on Paper Substrates With Tunable Threshold Voltage...........
J Sun, J Jiang, A Lu, W Dou, B Zhou, Q Wan, Y Kubota, T Matsumoto, ... 
Novel Branched nanostructures of Carbon nanotubes on Si substrates suitable for the realization of gas sensors
Y Abdi, S Mohajerzadeh, MH Sohrabi, M Fathipour, M Araghchini 

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